产品名称

中文名称: 纯进口HQ graphene 磷化锗晶体

英文名称：HQ graphene GeP Crystal

产品概述

GeP是一种半导体二维材料，单层带隙为~1.68eV，体晶带隙为~0.51eV。这些层通过范德华相互作用堆叠在一起，可以剥离成薄的二维层。

用HQ石墨烯制备的GeP晶体具有典型的横向尺寸为~0.1-0.3 cm，六角形和金属外观

GeP is a semiconductor 2D material having a bandgap of ~1.68eV for monolayers and ~0.51eV for bulk crystals. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. 
The GeP crystals produced at HQ Graphene have a typical lateral size of ~0.1-0.3 cm, hexagonal shaped and have a metallic appearance. 

技术参数

纯度: 99.995%

尺寸:1-3mm

产品特点

Electrical properties：Semiconductor

Crystal structure：Monoclinic

Unit cell parameters:a = 1.519 nm, b = 0.368 nm, c = 0.918 nm, α = γ = 90°, β = 101.560°

Type：Synthetic

其他信息
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原链接：https://www.hqgraphene.com/GeP.php