Single layer h-BN (Boron Nitride) film grown in copper foil.

h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp² bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).

During Chemical Vapor Deposition, BN is grown on both sides of the copper foil

Specifications:

• Close to complete coverage (90-95%), with some minor holes

• Thickness of the copper foil is 20 microns

• High crystalline quality, see SAD (Selected area [electron] diffraction) data

• Quality is confirmed by TEM. 

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• TEM shows perfect hexagonal structure.

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• On SEM image (below), BN is seen as wrinkles on top of the copper foil.

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• SAD data of h-BN

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• If transferred onto an SiO₂ substrate, the BN film may be seen as a white film. However, it is difficult to recognize the BN film on copper using a microscope.

• Absorbance data BN on copper

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• Transfer: PMMA Procedure, similar to that of graphene. It may be transferred on most substrates, which we may do in-house as custom work.